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hmc788alp2etr rf power transistor
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...Power Electronics High Performance Low Voltage Single N Channel Logic Level Gate FET IRLML5103TRPBF MOSFET N-Channel 20V 4.2A (Tc) 25W (Tc) Surface ...
2024-12-09 22:28:51
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... High Performance Power Electronics for Maximum Efficiency Specifications: - VDSS: 100V - ID: 40A - RDS(on): 0.0065Ω - Package: TO-247 - Transistor ...
2024-12-09 22:28:51
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IRFS7734TRLPBF High-Performance MOSFET Power Electronics for Enhanced Efficiency and Reliability IRFS7734TRLPBF MOSFET Transistor Product Description: ...
2024-12-09 22:28:51
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...Power Electronics Solution for High Current Applications Parameters: • Package: TO-220 • Transistor Type: N-Channel • Vds – Drain-Source Breakdown ...
2024-12-09 22:29:06
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Product Listing: IRF7389TRPBF N-Channel Power MOSFET • Technology: N-Channel • Drain-Source Voltage: 100V • Current - Continuous Drain (Id) @ 25°C: ...
2024-12-09 22:29:06
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IRFI4019H-117P MOSFET Power Electronics High Performance Low On Resistance Product Overview: The IRFI4019H-117P MOSFET is an N-channel enhancement ...
2024-12-09 22:29:06
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...-Source Voltage (Vgs): 20V • Drain-Source On-State Resistance (Rds): 0.068 ohm • Operating Temperature: -55C to +150C • Transistor Polarity: N...
2024-12-09 22:29:06
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...0V • Operating Temperature Range: -55°C to +175°C • Mounting Type: Through Hole • Transistor Type: MOSFET N-Channel • Power Dissipation: 75W • ...
2024-12-09 22:29:06
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FDS2582 - N-Channel MOSFET Power Electronics The FDS2582 is an N-Channel Enhancement Mode MOSFET designed for low voltage, high current switching ...
2024-12-09 22:29:06
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...: 75V • Maximum Gate Source Voltage: 20V • Maximum Drain Current: 57A • Maximum Drain Source Resistance: 0.100ohm • Power Dissipation: 115W • ...
2024-12-09 22:29:06
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