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hmc788alp2etr rf power transistor
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IRFU3910PBF MOSFET Transistor High Performance for Power Electronics Applications Product Description: The IRFU3910PBF is a N-Channel Power MOSFET ...
2024-12-09 22:28:51
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IRFS3306TRLPBF MOSFET Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is ...
2024-12-09 22:28:51
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... Power Dissipation: 2.1W - Operating Temperature: -55°C to 175°C Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade ...
2024-12-09 22:28:51
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...: N-Channel • Power Dissipation (Max): 16.5 W • Transistor Case Style: TO-220AB • Continuous Drain Current (Id): 11 A • No. of Pins: 3 • Operating ...
2024-12-09 22:28:51
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...Power Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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...Power Electronics SC-75 SMD High Performance Voltage Gate Charge RDS Transistor FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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FQD30N06TM TO-252-3 MOSFET Power Electronics Transistor for High Efficiency and Reliable Performance
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... nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 25 V FET Feature - Power Dissipation (Max) 2
2024-12-09 22:29:06
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...Power Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
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...Power Electronics Transistor for High-Speed Switching Applications Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 20...
2024-12-09 22:29:06
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...Power Electronics N-Channel Enhancement Mode Transistor TO-236-3 Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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