981 - 990 of 3338
high performance rf power transistors
Selling leads
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....5 V • Low distortion: 0.0008% THD+N • Low input bias current: 20 pA • Differential input voltage range: ±12 V • High common-mode rejection ratio: ...
2024-12-09 22:30:07
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... @ 1.2 A, 10 V Gate Charge (Qg) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) @ Vds: 308 pF @ 10 V Power - Max: 1.8 W Mounting Type:
2024-12-09 22:28:51
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...Description: - High-performance N-Channel MOSFETs with low on-resistance - Low gate charge and fast switching speeds for improved efficiency and ...
2024-12-09 22:28:51
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...: 32A - RDS (on): 0.032 Ohm - Maximum Gate Threshold Voltage: 4V - Maximum Gate Source Voltage: ±20V - Maximum Power Dissipation: 91W - Operating ...
2024-12-09 22:28:51
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... Power Electronics High Performance High Efficiency Low On Resistance Parameters: - Drain-Source Voltage: 100V - Continuous Drain Current: 70A - On...
2024-12-09 22:28:51
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IRF530PBF MOSFET Power Electronics High-Performance High-Reliability Low-Voltage Switching Product: IRF530PBF MOSFET Parameters: Voltage: 100V Current...
2024-12-09 22:28:51
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... MOSFET with a drain-source voltage of 55V and a drain-source on-state resistance of 0.9ohm. The maximum power dissipation is 9W. This MOSFET has a ...
2024-12-09 22:28:51
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IPW60R070P6 MOSFET Power Electronics High-Performance High-Efficiency Low-Voltage Switching Solution
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IPW60R070P6 MOSFET Power Electronics High-Performance High-Efficiency Low-Voltage Switching Solution Product Description: The IPW60R070P6 is an N...
2024-12-09 22:29:06
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...Current - Continuous Drain (Id) @ 25°C: 11A • Input Capacitance (Ciss) (Max) @ Vds: 662pF @ 25V • Power - Max: 500mW • Operating Temperature: -55°C ...
2024-12-09 22:29:06
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...Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation Drain to Source Voltage (Vdss) 200 V Current - ...
2024-12-09 22:29:06
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