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high performance rf power transistors
Selling leadsFDV303N MOSFET Power Electronics TO-236-3 High Performance Durability Power Electronics Applications
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FDV303N MOSFET Power Electronics TO-236-3 High Performance Durability Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide...
2024-12-09 22:29:06
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2N7002W MOSFET Power Electronics SC-70 High Performance Low Power Consumption FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source ...
2024-12-09 22:29:06
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FDN338P MOSFET Power Electronics High Performance Reliable Power Supply Solution TO-236-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
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NDS331N MOSFET Power Electronics TO-236-3 High Performance Reliable Power Switching Solutions FET Type N-Channel Technology MOSFET (Metal Oxide) Drain ...
2024-12-09 22:29:06
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FDMS86105 MOSFET Power Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology ...
2024-12-09 22:29:06
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..., and 0.119 Ohm RDS(on) • High-Speed Switching • Fast Intrinsic Diode • Low Input and Output Capacitance • RoHS Compliant • Halogen and Antimony ...
2024-12-09 22:28:51
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...Gate-Source Voltage: ±20V • Gate Threshold Voltage: 2.5V • Power Dissipation: 116W • Operating Temperature Range: -55 to 150°C • Mounting Type: ...
2024-12-09 22:28:51
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...Ω • Gate-Source Voltage: ±20V • Continuous Drain Current: 11A • Pulsed Drain Current: 22A • Power Dissipation: 17.3W • Operating Temperature Range: ...
2024-12-09 22:29:06
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IPW60R045CP High Performance MOSFET Power Electronics for Optimal Efficiency IPW60R045CP - N-Channel MOSFET Parameters: • Drain-Source Voltage: 60V • ...
2024-12-09 22:29:06
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...High Performance, Low Noise, Wideband RF Amplifier IC Chip Features: • High performance wideband amplifier with low noise and high linearity • High ...
2024-12-09 22:29:56
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