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high performance rf power transistors
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...: -60V • Drain Current: -24A • Gate-Source Voltage: ±20V • On-Resistance: 0.045Ω • RDS(on): 0.045Ω • Input Capacitance: 488pF • Power Dissipation: ...
2024-12-09 22:28:51
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...IC) designed to operate as a high-voltage isolation barrier in a variety of electronic systems. It provides a safe, efficient, and cost-effective ...
2024-12-09 22:30:19
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...High performance Power Isolator IC for Optimal Reliability TLP280-4(GB-TP,J,F Power Isolator IC Description: The TLP280-4(GB-TP,J,F is a 4-channel ...
2024-12-09 22:30:30
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SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage ...
2024-12-09 22:28:51
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... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through ...
2024-12-09 22:28:51
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... MOSFET is designed for use in a wide range of applications such as DC/DC converters, AC/DC power supplies and actuators. It features a low on...
2024-12-09 22:28:51
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...Power Electronics High-Performance High-Efficiency Low-Power Switching Solutions Product Listing: IRLL014NTRPBF – N-Channel MOSFET • Drain-Source ...
2024-12-09 22:29:06
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...High-Performance Power Electronics Solution for Automation Control IPW65R110CFD N-Channel Power MOSFET Product Description: The IPW65R110CFD N...
2024-12-09 22:29:06
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... N-channel device has a low on-state resistance and low gate charge that make it suitable for use in high efficiency and low power dissipation ...
2024-12-09 22:29:06
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... to provide a high level of electrical isolation between power control circuits, while providing reliable and accurate operation across a wide ...
2024-12-09 22:30:19
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