2471 - 2480 of 3338
high performance rf power transistors
Selling leads
|
L9333MD-TR SOIC-20-300mil Power electronic switch integrated circuit DESCRIPTION The L9333 is a monolithic integrated quad low side driver. It is ...
2024-12-09 22:29:56
|
|
...Power Electronics Transistor with Improved Performance and Reliability IRFS3306TRLPBF MOSFET Product Description: This MOSFET is a N-Channel ...
2024-12-09 22:28:51
|
|
IPB072N15N3G MOSFET Power Electronics High Power High Efficiency Low Losses This N-Channel MOSFET is a versatile, high-performance transistor for ...
2024-12-09 22:29:06
|
FQD30N06TM TO-252-3 MOSFET Power Electronics Transistor for High Efficiency and Reliable Performance
|
... nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 945 pF @ 25 V FET Feature - Power Dissipation (Max) 2
2024-12-09 22:29:06
|
|
.... It features a low on-resistance, fast switching speed and wide voltage range, making it suitable for power supply and motor control applications. ...
2024-12-09 22:29:06
|
|
AON7280 MOSFET Power Electronics Transistors High Frequency Switching Performance Package 8-DFN-EP FET Type N-Channel Technology MOSFET (Metal Oxide) ...
2024-12-09 22:29:06
|
|
...High CMR High Speed Power Isolator IC Product Listing Product Description: The HCPL-314J-500E is an optically-isolated power IC from Avago ...
2024-12-09 22:30:19
|
|
... to provide superior performance in power supply and DC-DC converter applications. The device has a maximum voltage rating of 25V and a maximum ...
2024-12-09 22:29:06
|
|
... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
|
|
...Power Electronics Product Description: The FQD11P06TM MOSFET power electronics is a high performance N-channel MOSFET designed for use in a wide ...
2024-12-09 22:29:06
|