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high efficiency rf power transistors
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..., providing excellent performance and reliability. This device provides a high level of isolation, with a maximum working voltage of 3.75V and a ...
2024-12-09 22:30:30
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...Power MOSFET Features: -High voltage capability: VDSS = 400V -Low on-resistance: RDS(ON) = 0.3 Ohm -Low gate charge: Qg = 3.2nC -Low drain-source ...
2024-12-09 22:29:06
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...Power Isolator IC High Performance High Reliability Isolation Solution Product Description: The EL357N(B)(TA)-G Power Isolator IC is a single...
2024-12-09 22:30:30
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...Power Module High Efficiency Low Loss Enhanced Performance IRGP4066D-EPBF IGBT Power Module Features: * 4.5 kV Isolation voltage * 600 V/1200 V...
2024-12-09 22:29:41
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...Power Management ICs Features: -Small size package -Low input voltage: 0.9V to 5.5V -Output voltage range: 0.7V to 5.5V -Output current up to 400mA ...
2024-12-09 22:30:30
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... • Wide VIN Range: 4.5 V to 13.2 V • Operating Frequency Range: 200 kHz to 1.2 MHz • Output Voltage Range: 0.6 V to VIN • High Efficiency: up to 95...
2024-12-09 22:30:30
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...Power Management IC Description: The LMR14030SDDAR is a high-efficiency power management IC from Texas Instruments that integrates a regulator, ...
2024-12-09 22:30:41
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... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain ...
2024-12-09 22:29:06
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.... It has a low on-resistance and high blocking voltage that make it suitable for a wide range of applications, including automotive, industrial, ...
2024-12-09 22:29:06
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... • High Voltage Capability • High Speed Switching • Low EMI • High Reliability • Low Thermal Resistance • Low Inductive Leakage • High Current ...
2024-12-09 22:29:41
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