1241 - 1250 of 1390
high efficiency rf power transistors
Selling leads
...Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for ...
2024-12-09 22:29:06
|
...power electronics device. This device is designed to provide high levels of efficiency and performance, making it ideal for a variety of applicatio...
2024-12-09 22:29:06
|
...highly integrated, low power, and cost-effective ARM Cortex-M0+ based MCU. It features a 32-bit ARM Cortex-M0+ CPU core, 80KB flash, 8KB SRAM, a 12...
2024-12-09 22:29:41
|
...Small Size • Easy to Install Specifications: • Supply Voltage: 2.7V - 6.5V • Maximum Operating Current: 1.2A • Maximum Power Dissipation: 3.2W • ...
2024-12-09 22:30:19
|
The MAX5035BASA+T is a highly-integrated, low-cost single-chip power management IC for space-constrained applications. It integrates a high-current ...
2024-12-09 22:30:30
|
...Power Management IC Features: -Wide input voltage range from 4.5V to 24V -Output voltage adjustable from 0.8V to 20V -Efficient, synchronous ...
2024-12-09 22:30:30
|
IRF6665TRPBF MOSFET Power Electronics High-Performance Low-RDS(on) for Improved Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to ...
2024-12-09 22:29:06
|
IRF840APBF MOSFET High-Performance Power Electronics for Enhanced Reliability and Efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain ...
2024-12-09 22:29:06
|
...power, dual-supply Flash memory with integrated EEPROM emulation designed to meet the needs of portable applications. Product Parameters: - Core: ...
2024-12-09 22:29:18
|
...t operates from an input voltage of 4.5V to 36V and provides a regulated output voltage of 0.8V to 5V. The device integrates a high efficiency buck ...
2024-12-09 22:30:19
|