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high efficiency rf power transistors
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...High Power Capability: With a maximum drain current of 12A and a voltage ratingof 600v, the SIHF12N60E-E3 N-Channel Transistor is capable of ...
2024-12-09 22:28:51
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... Current: 110A • Drain-Source On-State Resistance: 0.033 Ohms • Maximum Operating Temperature: +175 °C • Mounting Type: Through Hole • Transistor ...
2024-12-09 22:28:51
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...package; reinforced with a copper clip -High temperature operation; up to 175°C Applications: -DC-DC converters -Power supplies -Motor control -LED ...
2024-12-09 22:29:06
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Product Listing: IRFB4115GPBF MOSFET Transistor Product Features: • N-Channel MOSFET Transistor • Maximum Drain-Source Voltage: 100 V • Maximum Drain ...
2024-12-09 22:28:51
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...many applications. The MAX706TESA+T family of ICs offers a wide range of power supply solutions, including DC-DC converters, linear regulators, and ...
2024-12-09 22:30:30
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... power transistor with a low on-resistance of 24A. 2. It has a breakdown voltage of 500V and a drain-source voltage of 400V. 3. It is a surface...
2024-12-09 22:28:51
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... on-resistance. It is ideal for use in high-efficiency power supplies, automotive applications, and consumer electronics. Product Specifications: ...
2024-12-09 22:29:06
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... channel, isolated power supply IC from Silicon Laboratories. It is designed to provide galvanic isolation between an input power supply and an ...
2024-12-09 22:30:19
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BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET ...
2024-12-09 22:29:06
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..., low power, and low cost solution for providing galvanic isolation between the input and output side of power conversion systems. It features a ...
2024-12-09 22:30:19
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