201 - 210 of 416
enhanced reliability mosfet basic electronics
Selling leads
|
Features: - N-Channel Enhancement Mode - Low On-Resistance: 4.7 mΩ (max) @ VGS = 10 V - Low Gate Charge: 17 nC (max) - Low Input/Output Capacitance: 5 ...
2024-12-09 22:28:51
|
|
AO3420, N-Channel Enhancement Mode Field Effect Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) ...
2024-12-09 22:29:06
|
|
Product Listing: AO3416 - N-Channel Enhancement Mode MOSFET Features: -High density cell design for extremely low RDS(on) -High speed switching -Low ...
2024-12-09 22:29:06
|
|
AO3404A N-Channel Enhancement Mode MOSFET Product Features: • Low on-resistance RDS(on) • Low Gate charge (Qg) • Low threshold voltage (Vth) • Fast ...
2024-12-09 22:29:06
|
|
AO3414 N-Channel Enhancement Mode MOSFET Features: • High Density Cell Design for Low On-Resistance • Low Input Capacitance and Fast Switching • RoHS ...
2024-12-09 22:29:06
|
|
Product Listing: AON4803 MOSFET Power Electronics Features: - Low on-resistance RDS(on) 0.5 mΩ typ. - Low gate charge Qg and gate-source capacitance ...
2024-12-09 22:29:06
|
|
...MOSFET Features: • N-Channel Enhancement Mode • 100V Drain-Source Voltage • 4.2A Continuous Drain Current • Low RDS(on) • Low Gate Charge • Logic ...
2024-12-09 22:28:51
|
|
AOB480L MOSFET Power Electronics Product Features: -High power density; up to 480W in a small package -High efficiency; up to 95% -Low on-resistance; ...
2024-12-09 22:29:06
|
|
AOD2810 MOSFET Power Electronics Features: • Low RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Low Output Capacitance • High ...
2024-12-09 22:29:06
|
|
AO6402A MOSFET Power Electronics Features: • Low RDS(on) • High Efficiency • Low Gate Charge • Low Output Capacitance • Low Leakage Current • ...
2024-12-09 22:29:06
|