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ao4612 mosfet in power electronics
Selling leads
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... nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V FET Feature - Power Dissipation (Max) 55W (Tc)
2024-12-09 22:29:06
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...MOSFET Power Electronics Single N-Channel 40 V 0.67 m 370 A Package 5-DFN -60 V, -12 A, 135 Drain to Source Voltage (Vdss) 40 V Current - ...
2024-12-09 22:29:06
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... 7.3 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 20 V FET Feature - Power Dissipation (Max) 3.5W (Ta), 28W (Tc)
2024-12-09 22:29:06
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...MOSFET Power Electronics for Advanced Applications N-Channel DUAL COOL 33 30 V 157 A 1.28 m Drain to Source Voltage (Vdss) 30 V Current - ...
2024-12-09 22:29:06
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...MOSFET Power Electronics Single N-Channel SO-8 FL 30 V 46 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) ...
2024-12-09 22:29:06
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...) @ Id 2.4V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 5 V FET Feature - Power Dissipation (Max) 420mW (Ta) Operating ...
2024-12-09 22:29:06
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... 2.5V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating ...
2024-12-09 22:29:06
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... • Maximum Gate-Source Voltage: -8V • Maximum Drain Current: -14A • Maximum Drain-Source On-State Resistance: 3.8Ω • Maximum Power Dissipation @ 25...
2024-12-09 22:29:06
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MOSFET Power Electronics SQ2315ES-T1_BE3 High Performance Low Voltage NChannel Product Parameters: • Drain-Source Voltage (Vdss): 600V • Id @ 25°C: ...
2024-12-09 22:28:51
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IRF1404PBF MOSFET High Performance Power Electronics for Efficient Switching Features: • Low On-Resistance • Low Gate Threshold Voltage • Low Input ...
2024-12-09 22:28:51
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