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200w rf power transistors
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AON7934 Dual N-Channel Enhancement Mode MOSFET Product Parameters: • Max Rds(on): 0.2Ω@Vgs=4.5V • Gate Charge: 5nC • Drain-Source Breakdown Voltage: ...
2024-12-09 22:29:06
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Product Description: 1. N-Channel Enhancement Mode Field Effect Transistor 2. Maximum Drain Source Voltage: 200V 3. Drain Current: 31A 4. RDS(on): 0...
2024-12-09 22:29:06
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FDMS86350 - N-Channel Automotive MOSFET The FDMS86350 is an N-channel Power Trench® MOSFET designed for automotive applications. It offers high ...
2024-12-09 22:29:06
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Product Listing: FDMS86163P – N-Channel Enhancement Mode Power MOSFET Features: • 100V Drain-Source Voltage • 25A Continuous Drain Current • 200mΩ @ ...
2024-12-09 22:29:06
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Product Description: The NTD25P03LT4G is a P-channel Logic Level MOSFET intended for use as a load switch in power management applications. It ...
2024-12-09 22:29:06
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FDS6673BZ N-Channel MOSFET Power Electronics Product Features: • Logic level gate drive • Low gate charge • Low on-state resistance • Fast switching • ...
2024-12-09 22:29:06
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...power, multi-band RF transceiver designed for the 2.4GHz ISM band. It is ideal for applications including Wireless Local Area Networks (WLANs), ...
2024-12-09 22:30:19
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..., OTP, and UVLO - Built-in PWM modulation system - High efficiency up to 92% - Input voltage range from 8V to 40V - Low standby power dissipation - ...
2024-12-09 22:30:07
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AD8370AREZ-RL7 RF Power Amplifier IC Chip Features: • Wide Frequency Range: DC to 4 GHz • High Gain: 15 dB Typical • High Linearity: +25 dBm IIP3 • ...
2024-12-09 22:30:07
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...power handling capability - Low thermal resistance - Wide range of operating temperatures - Low switching losses - Low output capacitance - High ...
2024-12-09 22:30:19
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