RF Power Transistor HMC1122LP4METR High Gain Low Noise And High Efficiency

HMC1122LP4METR RF Power Transistor

Product Description:

The HMC1122LP4METR is a high-performance, low-distortion, highly reliable RF power transistor that provides superior performance in high-power applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications such as cellular base stations, Wi-Fi, and microwave point-to-point systems.

Features:

• High performance, low distortion
• Highly reliable
• Excellent linearity and efficiency
• 17 dB gain
• 50 W of output power
• Suitable for broadband power applications
• Designed for cellular base station, Wi-Fi, and microwave point-to-point systems

Package:

• 4mm QFN

Absolute Maximum Ratings:

• Supply Voltage (Vcc): 28V
• Output Power (Pout): 50W
• Operating Temperature: -40°C to +85°C
• Storage Temperature: -65°C to +150°C
• Operating Frequency: DC to 6 GHz

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