C2M0040120D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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C2M0040120D

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.8V @ 10mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	115 nC @ 20 V
Rds On (Max) @ Id, Vgs	52mOhm @ 40A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	+25V, -10V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	1893 pF @ 1000 V
Mounting Type	Through Hole
Series	Z-FET™
Supplier Device Package	TO-247-3
Mfr	Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Power Dissipation (Max)	330W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	C2M0040120
Description	SICFET N-CH 1200V 60A TO247-3

Detailed Product Description

N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-3

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