IRL640PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRL640PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	66 nC @ 5 V
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tube
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-220AB
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Power Dissipation (Max)	125W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRL640
Description	MOSFET N-CH 200V 17A TO220AB

Detailed Product Description

N-Channel 200 V 17A (Tc) 125W (Tc) Through Hole TO-220AB

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