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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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NTH4L015N065SC1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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NTH4L015N065SC1

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs 283 nC @ 18 V
Product Status Active
Mounting Type Through Hole
Package Tube
Input Capacitance (Ciss) (Max) @ Vds 4790 pF @ 325 V
Series -
Vgs (Max) +22V, -8V
Vgs(th) (Max) @ Id 4.3V @ 25mA
Supplier Device Package TO-247-4L
Rds On (Max) @ Id, Vgs 18mOhm @ 75A, 18V
Mfr onsemi
Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Power Dissipation (Max) 500W (Tc)
Package / Case TO-247-4
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 142A (Tc)
Technology SiCFET (Silicon Carbide)
FET Feature -
Description SILICON CARBIDE MOSFET, NCHANNEL
Detailed Product Description
N-Channel 650 V 142A (Tc) 500W (Tc) Through Hole TO-247-4L
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