IXTY02N120P

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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IXTY02N120P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 100µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 10 V
Rds On (Max) @ Id, Vgs	75Ohm @ 500mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	104 pF @ 25 V
Mounting Type	Surface Mount
Series	Polar
Supplier Device Package	TO-252AA
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Power Dissipation (Max)	33W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTY02
Description	MOSFET N-CH 1200V 200MA TO252

Detailed Product Description

N-Channel 1200 V 200mA (Tc) 33W (Tc) Surface Mount TO-252AA

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