C3M0021120D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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C3M0021120D

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.6V @ 17.7mA
Operating Temperature	-40°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 15 V
Rds On (Max) @ Id, Vgs	28.8mOhm @ 50A, 15V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	+15V, -4V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4818 pF @ 1000 V
Mounting Type	Through Hole
Series	C3M™
Supplier Device Package	TO-247-3
Mfr	Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Power Dissipation (Max)	469W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	C3M0021120
Description	SICFET N-CH 1200V 100A TO247-3

Detailed Product Description

N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-3

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