C3M0065100J

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

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C3M0065100J

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	3.5V @ 5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 15 V
Rds On (Max) @ Id, Vgs	78mOhm @ 20A, 15V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	+15V, -4V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 600 V
Mounting Type	Surface Mount
Series	C3M™
Supplier Device Package	D2PAK-7
Mfr	Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Power Dissipation (Max)	113.5W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	C3M0065100
Description	SICFET N-CH 1000V 35A D2PAK-7

Detailed Product Description

N-Channel 1000 V 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7

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