IRFR224PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFR224PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 2.3A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	250 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	D-Pak
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Power Dissipation (Max)	2.5W (Ta), 42W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFR224
Description	MOSFET N-CH 250V 3.8A DPAK

Detailed Product Description

N-Channel 250 V 3.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak

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