IXTH80N20L

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTH80N20L

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Rds On (Max) @ Id, Vgs	32mOhm @ 40A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	6160 pF @ 25 V
Mounting Type	Through Hole
Series	Linear
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Power Dissipation (Max)	520W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTH80
Description	MOSFET N-CH 200V 80A TO247

Detailed Product Description

N-Channel 200 V 80A (Tc) 520W (Tc) Through Hole TO-247 (IXTH)

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