IRFB3306GPBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFB3306GPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 150µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10 V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	60 V
Vgs (Max)	±20V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	4520 pF @ 50 V
Mounting Type	Through Hole
Series	HEXFET®
Supplier Device Package	TO-220AB
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Power Dissipation (Max)	230W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFB3306
Description	MOSFET N-CH 60V 120A TO220AB

Detailed Product Description

N-Channel 60 V 120A (Tc) 230W (Tc) Through Hole TO-220AB

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