IXTH10P60

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTH10P60

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4700 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Power Dissipation (Max)	300W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTH10
Description	MOSFET P-CH 600V 10A TO247

Detailed Product Description

P-Channel 600 V 10A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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