UF3C120150K4S

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Beijing Silk Road Enterprise Management Services Co.,LTD

Country/Region:china

Tel:86--15112670997

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UF3C120150K4S

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 10mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Gate Charge (Qg) (Max) @ Vgs	25.7 nC @ 12 V
Rds On (Max) @ Id, Vgs	180mOhm @ 5A, 12V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	12V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	±25V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	738 pF @ 100 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-247-4
Mfr	Qorvo
Current - Continuous Drain (Id) @ 25°C	18.4A (Tc)
Power Dissipation (Max)	166.7W (Tc)
Technology	SiCFET (Cascode SiCJFET)
Base Product Number	UF3C120150
Description	SICFET N-CH 1200V 18.4A TO247-4

Detailed Product Description

N-Channel 1200 V 18.4A (Tc) 166.7W (Tc) Through Hole TO-247-4

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