IMZ120R350M1HXKSA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IMZ120R350M1HXKSA1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.7V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-4
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 18 V
Rds On (Max) @ Id, Vgs	350mOhm @ 2A, 18V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	+23V, -7V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	182 pF @ 800 V
Mounting Type	Through Hole
Series	CoolSiC™
Supplier Device Package	PG-TO247-4-1
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Power Dissipation (Max)	60W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	IMZ120
Description	SICFET N-CH 1.2KV 4.7A TO247-4

Detailed Product Description

N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1

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