IRFP4568PBFXKMA1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFP4568PBFXKMA1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	227 nC @ 10 V
Product Status	Active
Mounting Type	Through Hole
Package	Tube
Input Capacitance (Ciss) (Max) @ Vds	10470 pF @ 50 V
Series	HEXFET®
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-247AC
Rds On (Max) @ Id, Vgs	5.9mOhm @ 103A, 10V
Mfr	Infineon Technologies
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	517W (Tc)
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	171A (Tc)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Description	TRENCH >=100V PG-TO247-3

Detailed Product Description

N-Channel 150 V 171A (Tc) 517W (Tc) Through Hole TO-247AC

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