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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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RS1E321GNTB1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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RS1E321GNTB1

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature -
Vgs(th) (Max) @ Id 2.5V @ 1mA
Operating Temperature 150°C (TJ)
Package / Case 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs 42.8 nC @ 10 V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 32A, 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Product Status Active
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 15 V
Mounting Type Surface Mount
Series -
Supplier Device Package 8-HSOP
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 80A (Tc)
Power Dissipation (Max) 3W (Ta)
Technology MOSFET (Metal Oxide)
Base Product Number RS1E
Description MOSFET N-CH 30V 32A/80A 8HSOP
Detailed Product Description
N-Channel 30 V 32A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
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