IXTH6N100D2

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTH6N100D2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	Depletion Mode
Vgs(th) (Max) @ Id	-
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Drain to Source Voltage (Vdss)	1000 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
Mounting Type	Through Hole
Series	Depletion
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Power Dissipation (Max)	300W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTH6
Description	MOSFET N-CH 1000V 6A TO247

Detailed Product Description

N-Channel 1000 V 6A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

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