IXTH76P10T

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTH76P10T

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	197 nC @ 10 V
Rds On (Max) @ Id, Vgs	25mOhm @ 38A, 10V
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±15V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	13700 pF @ 25 V
Mounting Type	Through Hole
Series	TrenchP™
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Power Dissipation (Max)	298W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTH76
Description	MOSFET P-CH 100V 76A TO247

Detailed Product Description

P-Channel 100 V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH)

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