IRFD220PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFD220PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	4-DIP (0.300", 7.62mm)
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Rds On (Max) @ Id, Vgs	800mOhm @ 480mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	4-HVMDIP
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Power Dissipation (Max)	1W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFD220
Description	MOSFET N-CH 200V 800MA 4DIP

Detailed Product Description

N-Channel 200 V 800mA (Ta) 1W (Ta) Through Hole 4-HVMDIP

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