STW26NM60N

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Beijing Silk Road Enterprise Management Services Co.,LTD

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STW26NM60N

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Rds On (Max) @ Id, Vgs	165mOhm @ 10A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
Mounting Type	Through Hole
Series	MDmesh™ II
Supplier Device Package	TO-247-3
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Power Dissipation (Max)	140W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STW26
Description	MOSFET N-CH 600V 20A TO247-3

Detailed Product Description

N-Channel 600 V 20A (Tc) 140W (Tc) Through Hole TO-247-3

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