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Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
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SISS80DN-T1-GE3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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SISS80DN-T1-GE3

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature -
Vgs(th) (Max) @ Id 1.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) 20 V
Vgs (Max) +12V, -8V
Product Status Active
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
Mounting Type Surface Mount
Series TrenchFET® Gen IV
Supplier Device Package PowerPAK® 1212-8S
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)
Power Dissipation (Max) 5W (Ta), 65W (Tc)
Technology MOSFET (Metal Oxide)
Base Product Number SISS80
Description MOSFET N-CH 20V 58.3A/210A PPAK
Detailed Product Description
N-Channel 20 V 58.3A (Ta), 210A (Tc) 5W (Ta), 65W (Tc) Surface Mount PowerPAK® 1212-8S
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