CSD17581Q3AT

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD17581Q3AT

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.7V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 16A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	3640 pF @ 15 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	8-VSONP (3x3.3)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Power Dissipation (Max)	2.8W (Ta), 63W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD17581
Description	MOSFET N-CH 30V 60A 8VSON

Detailed Product Description

N-Channel 30 V 60A (Tc) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.3)

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