CSD16327Q3

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CSD16327Q3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	4mOhm @ 24A, 8V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	25 V
Vgs (Max)	+10V, -8V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 12.5 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Power Dissipation (Max)	3W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD16327
Description	MOSFET N-CH 25V 60A 8VSON

Detailed Product Description

N-Channel 25 V 60A (Tc) 3W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)

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