FDC645N

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Beijing Silk Road Enterprise Management Services Co.,LTD

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FDC645N

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	26mOhm @ 6.2A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±12V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1460 pF @ 15 V
Mounting Type	Surface Mount
Series	PowerTrench®
Supplier Device Package	SuperSOT™-6
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Power Dissipation (Max)	1.6W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	FDC645
Description	MOSFET N-CH 30V 5.5A SUPERSOT6

Detailed Product Description

N-Channel 30 V 5.5A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6

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