CSD17318Q2

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD17318Q2

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.2V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	15.1mOhm @ 8A, 8V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 8V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	879 pF @ 15 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	6-WSON (2x2)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Power Dissipation (Max)	16W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD17318
Description	MOSFET N-CH 30V 25A 6WSON

Detailed Product Description

N-Channel 30 V 25A (Tc) 16W (Tc) Surface Mount 6-WSON (2x2)

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