CSD13302W

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Beijing Silk Road Enterprise Management Services Co.,LTD

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CSD13302W

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	1.3V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	4-UFBGA, DSBGA
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	17.1mOhm @ 1A, 4.5V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	12 V
Vgs (Max)	±10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	862 pF @ 6 V
Mounting Type	Surface Mount
Series	NexFET™
Supplier Device Package	4-DSBGA (1x1)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Power Dissipation (Max)	1.8W (Ta)
Technology	MOSFET (Metal Oxide)
Base Product Number	CSD13302
Description	MOSFET N-CH 12V 1.6A 4DSBGA

Detailed Product Description

N-Channel 12 V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA (1x1)

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