IRFP3703PBF

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IRFP3703PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	209 nC @ 10 V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 76A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	7V, 10V
Package	Tube
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	8250 pF @ 25 V
Mounting Type	Through Hole
Series	HEXFET®
Supplier Device Package	TO-247AC
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	210A (Tc)
Power Dissipation (Max)	3.8W (Ta), 230W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFP3703
Description	MOSFET N-CH 30V 210A TO247AC

Detailed Product Description

N-Channel 30 V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-247AC

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