IXTL2N470

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXTL2N470

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	6V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	ISOPLUSi5-Pak™
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Rds On (Max) @ Id, Vgs	20Ohm @ 1A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	4700 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	6860 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	ISOPLUSi5-Pak™
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Power Dissipation (Max)	220W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXTL2
Description	MOSFET N-CH 4700V 2A I5PAK

Detailed Product Description

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™

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