IXFH180N20X3

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IXFH180N20X3

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 4mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	154 nC @ 10 V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 90A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	200 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	10300 pF @ 25 V
Mounting Type	Through Hole
Series	HiPerFET™, Ultra X3
Supplier Device Package	TO-247 (IXTH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Power Dissipation (Max)	780W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXFH180
Description	MOSFET N-CH 200V 180A TO247

Detailed Product Description

N-Channel 200 V 180A (Tc) 780W (Tc) Through Hole TO-247 (IXTH)

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