NTHL060N065SC1

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Beijing Silk Road Enterprise Management Services Co.,LTD

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NTHL060N065SC1

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 18 V
Product Status	Active
Mounting Type	Through Hole
Package	Tube
Input Capacitance (Ciss) (Max) @ Vds	1473 pF @ 325 V
Series	-
Vgs (Max)	+22V, -8V
Vgs(th) (Max) @ Id	4.3V @ 6.5mA
Supplier Device Package	TO-247-3
Rds On (Max) @ Id, Vgs	70mOhm @ 20A, 18V
Mfr	onsemi
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Power Dissipation (Max)	176W (Tc)
Package / Case	TO-247-3
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Description	SIC MOS TO247-3L 650V

Detailed Product Description

N-Channel 650 V 47A (Tc) 176W (Tc) Through Hole TO-247-3

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