VP2206N3-G

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VP2206N3-G

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Product Status	Active
Mounting Type	Through Hole
Vgs(th) (Max) @ Id	3.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
Series	-
Vgs (Max)	±20V
Package	Bag
Supplier Device Package	TO-92-3
Rds On (Max) @ Id, Vgs	900mOhm @ 3.5A, 10V
Mfr	Microchip Technology
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	P-Channel
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Power Dissipation (Max)	740mW (Tc)
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	640mA (Tj)
Technology	MOSFET (Metal Oxide)
Base Product Number	VP2206
Description	MOSFET P-CH 60V 640MA TO92-3

Detailed Product Description

P-Channel 60 V 640mA (Tj) 740mW (Tc) Through Hole TO-92-3

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