LSIC1MO120E0160

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Beijing Silk Road Enterprise Management Services Co.,LTD

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LSIC1MO120E0160

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 5mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 20 V
Rds On (Max) @ Id, Vgs	200mOhm @ 10A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1200 V
Vgs (Max)	+22V, -6V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	870 pF @ 800 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-247AD
Mfr	Littelfuse Inc.
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Power Dissipation (Max)	125W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	LSIC1MO120
Description	SICFET N-CH 1200V 22A TO247-3

Detailed Product Description

N-Channel 1200 V 22A (Tc) 125W (Tc) Through Hole TO-247AD

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