C2M1000170D

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Beijing Silk Road Enterprise Management Services Co.,LTD

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C2M1000170D

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.4V @ 100µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 20 V
Rds On (Max) @ Id, Vgs	1.1Ohm @ 2A, 20V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Drain to Source Voltage (Vdss)	1700 V
Vgs (Max)	+25V, -10V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	191 pF @ 1000 V
Mounting Type	Through Hole
Series	Z-FET™
Supplier Device Package	TO-247-3
Mfr	Wolfspeed, Inc.
Current - Continuous Drain (Id) @ 25°C	4.9A (Tc)
Power Dissipation (Max)	69W (Tc)
Technology	SiCFET (Silicon Carbide)
Base Product Number	C2M1000170
Description	SICFET N-CH 1700V 4.9A TO247-3

Detailed Product Description

N-Channel 1700 V 4.9A (Tc) 69W (Tc) Through Hole TO-247-3

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