PSMN1R2-30YLDX

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Beijing Silk Road Enterprise Management Services Co.,LTD

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PSMN1R2-30YLDX

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.2V @ 1mA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	SC-100, SOT-669
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Rds On (Max) @ Id, Vgs	1.24mOhm @ 25A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	30 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4616 pF @ 15 V
Mounting Type	Surface Mount
Series	-
Supplier Device Package	LFPAK56, Power-SO8
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Power Dissipation (Max)	194W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	PSMN1R2
Description	MOSFET N-CH 30V 100A LFPAK56

Detailed Product Description

N-Channel 30 V 100A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

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