TK39N60W5,S1VF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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TK39N60W5,S1VF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 1.9mA
Operating Temperature	150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Rds On (Max) @ Id, Vgs	74mOhm @ 19.4A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	600 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
Mounting Type	Through Hole
Series	DTMOSIV
Supplier Device Package	TO-247
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Power Dissipation (Max)	270W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	TK39N60
Description	MOSFET N-CH 600V 38.8A TO247

Detailed Product Description

N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247

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