IXFH14N80P

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IXFH14N80P

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	5.5V @ 4mA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-247-3
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Rds On (Max) @ Id, Vgs	720mOhm @ 500mA, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	800 V
Vgs (Max)	±30V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 25 V
Mounting Type	Through Hole
Series	HiPerFET™, Polar
Supplier Device Package	TO-247AD (IXFH)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Power Dissipation (Max)	400W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IXFH14
Description	MOSFET N-CH 800V 14A TO247AD

Detailed Product Description

N-Channel 800 V 14A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)

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