IRFBE30PBF

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Beijing Silk Road Enterprise Management Services Co.,LTD

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IRFBE30PBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Drain to Source Voltage (Vdss)	800 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Mounting Type	Through Hole
Series	-
Supplier Device Package	TO-220AB
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Power Dissipation (Max)	125W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRFBE30
Description	MOSFET N-CH 800V 4.1A TO220AB

Detailed Product Description

N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB

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