STD100N10F7

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Beijing Silk Road Enterprise Management Services Co.,LTD

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STD100N10F7

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	4.5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Rds On (Max) @ Id, Vgs	8mOhm @ 40A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±20V
Product Status	Active
Input Capacitance (Ciss) (Max) @ Vds	4369 pF @ 50 V
Mounting Type	Surface Mount
Series	DeepGATE™, STripFET™ VII
Supplier Device Package	DPAK
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Power Dissipation (Max)	120W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	STD100
Description	MOSFET N CH 100V 80A DPAK

Detailed Product Description

N-Channel 100 V 80A (Tc) 120W (Tc) Surface Mount DPAK

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