IRLU3110ZPBF

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IRLU3110ZPBF

Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature	-
Vgs(th) (Max) @ Id	2.5V @ 100µA
Operating Temperature	-55°C ~ 175°C (TJ)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 4.5 V
Rds On (Max) @ Id, Vgs	14mOhm @ 38A, 10V
FET Type	N-Channel
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Drain to Source Voltage (Vdss)	100 V
Vgs (Max)	±16V
Product Status	Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds	3980 pF @ 25 V
Mounting Type	Through Hole
Series	HEXFET®
Supplier Device Package	IPAK (TO-251AA)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Power Dissipation (Max)	140W (Tc)
Technology	MOSFET (Metal Oxide)
Base Product Number	IRLU3110
Description	MOSFET N-CH 100V 42A IPAK

Detailed Product Description

N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)

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